产      品

  • GaAs SI
  • GaAs SC
  • InP SI
  • InP SC
  • Ge SC

Undoped GaAs

Semi-Insulating GaAs Specifications

 

Growth Method VGF
Dopant Carbon
Wafer Shape* Round (DIA: 2", 3", 4", and 6")
Surface Orientation** (100)±0.5°

*5" Wafers available upon request

**Other Orientations maybe available upon request

 

Resistivity (Ω.cm) ≥1 × 107 ≥1 × 108
Mobility (cm2/V.S) ≥ 5,000 ≥ 4,000
Etch Pitch Density (cm2) 1,500-5,000 1,500-5,000

 

Wafer Diameter (mm) 50.8±0.3 76.2±0.3 100±0.3 150±0.3
Thickness (µm) 350±25 625±25 625±25 675±25
TTV [P/P] (µm) ≤ 4 ≤ 4 ≤ 4 ≤ 4
TTV [P/E] (µm) ≤ 10 ≤ 10 ≤ 10 ≤ 10
WARP (µm) ≤10 ≤10 ≤10 ≤5
OF (mm) 17±1 22±1 32.5±1 NOTCH
OF / IF (mm) 7±1 12±1 18±1 N/A
Polish* E/E, P/E, P/P E/E, P/E, P/P E/E, P/E, P/P E/E, P/E, P/P

*E=Etched, P=Polished

Note: Other Specifications maybe available upon request

n- and p-type GaAs

Semi-conducting GaAs Specifications

 

Growth Method VGF
Dopant Si (n-type) AND Zn (p-type)
Wafer Shape Round (DIA: 2", 3", 4" and 6")
Surface Orientation* (100)±0.5°

*Other Orientations maybe available upon request

 

Dopant Si (n-type) Zn (p-type)
Carrier Concentration (cm-3) ( 0.8-4) × 1018 ( 0.5-5) × 1019
Mobility (cm2/V.S.) ( 1-2.5) × 103 50-120
Etch Pitch Density (cm2) 100-5000 3,000-5,000

 

Wafer Diameter (mm) 50.8±0.3 76.2±0.3 100±0.3
Thickness (µm) 350±25 625±25 625±25
TTV [P/P] (µm) ≤4 ≤4 ≤4
TTV [P/E] (µm) ≤ 10 ≤ 10 ≤ 10
WARP (µm) ≤ 10 ≤ 10 ≤ 10
OF (mm) 17±1 22±1 32.5±1
OF / IF (mm) 7±1 12±1 18±1
Polish* E/E, P/E, P/P E/E, P/E, P/P E/E, P/E, P/P

*E=Etched, P=Polished

Note: Other Specifications maybe available upon request

Fe Doped InP

Semi-Insulating InP Specifications

 

Growth Method VGF
Dopant Iron (FE)
Wafer Shape Round (DIA: 2", 3", AND 4")
Surface Orientation (100)±0.5°

*Other Orientations maybe available upon request

 

Resistivity (?.cm) ≥0.5 × 107
Mobility (cm2/V.S) ≥ 1,000
Etch Pitch Density (cm2) 1,500-5,000

 

Wafer Diameter (mm) 50.8±0.3 76.2±0.3 100±0.3
Thickness (µm) 350±25 625±25 625±25
TTV [P/P] (µm) ≤ 10 ≤ 10 ≤ 10
TTV [P/E] (µm) ≤ 10 ≤ 15 ≤ 15
WARP (µm) ≤ 15 ≤ 15 ≤ 15
OF (mm) 17±1 22±1 32.5±1
OF / IF (mm) 7±1 12±1 18±1
Polish* E/E, P/E, P/P E/E, P/E, P/P E/E, P/E, P/P

*E=Etched, P=Polished

Note: Other Specifications maybe available upon request

n- and p-type InP

Semi-conducting InP Specifications

 

Growth Method VGF
Dopant n-type: S, Sn AND Undoped; p-type: Zn
Wafer Shape Round (DIA: 2", 3", AND 4")
Surface Orientation (100)±0.5°

*Other Orientations maybe available upon request

 

Dopant S & Sn (n-type) Undoped (n-type) Zn (p-type)
Carrier Concentration (cm-3) (0.8-8) × 1018 (1-10) × 1015 (0.8-8) ×1018
Mobility (cm2/V.S.) (1-2.5) × 103 (3-5) × 103 50-100
Etch Pitch Density (cm2) 100-5,000 ≤ 5000 ≤ 500

 

Wafer Diameter (mm) 50.8±0.3 76.2±0.3 100±0.3
Thickness (µm) 350±25 625±25 625±25
TTV [P/P] (µm) ≤ 10 ≤ 10 ≤ 10
TTV [P/E] (µm) ≤ 10 ≤ 15 ≤ 15
WARP (µm) ≤ 15 ≤ 15 ≤ 15
OF (mm) 17±1 22±1 32.5±1
OF / IF (mm) 7±1 12±1 18±1
Polish* E/E, P/E, P/P E/E, P/E, P/P E/E, P/E, P/P

*E=Etched, P=Polished

Note: Other Specifications maybe available upon request

n- and p-type Ge

Semi-conducting Ge Specifications

 

Growth Method VGF
Dopant n-type: As; p-type: Ga
Wafer Shape Round (DIA: 2" TO 6")
Surface Orientation** (100)±0.5°

**Other Orientations maybe available upon request

 

Dopant As (n-type) Ga (p-type)
Resistivity  (?.cm) 0.05-0.25 0.005-0.04
Etch Pitch Density (cm2) ≤ 300 ≤ 300

 

Wafer Diameter (mm) 50.8±0.3 100±0.3
Thickness (µm) 175±25 175±25
TTV [P/P] (µm) ≤ 15 ≤ 15
WARP (µm) ≤ 25 ≤ 25
IF* (mm) 17±1 32.5±1
OF (mm) 7±1 18±1
Polish** E/E, P/E, P/G E/E, P/E, P/G
Backside Ra (µm)*** < 0.1 < 0.1

*If needed by customer

**E=Etched, P=Polished, G=Ground

***Ra=Average Service Roughness

3" AND 6" wafers available upon request

Note: Other Specifications maybe available upon request